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DG2012
New Product
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
FEATURES
D D D D D D Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rDS(on): 1 W Typ. Fast Switching - tON : 17 ns, tOFF: 13 ns Low Leakage TTL/CMOS Compatible 6-Pin SC-70 Package
BENEFITS
D D D D Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space
APPLICATIONS
D D D D D Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits
DESCRIPTION
The DG2012 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 W) and small physical size (SC70), the DG2012 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2012 is built on Vishay Siliconix's low voltage submicron CMOS process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG2012.
Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE Logic
SC-70
IN V+ GND 1 2 3 Top View Device Marking: E7xx 6 5 4 NO (Source1) COM NC (Source2) 0 1
NC
ON OFF
NO
OFF ON
ORDERING INFORMATION Temp Range
-40 to 85C
Package
SC70-6
Part Number
DG2012DL
Document Number: 72176 S-03723--Rev. A, 07-Apr-03
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1
DG2012
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (NO, NC and COM Pins) . . . . . . . . . . . . . . . . "100 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150C Power Dissipation (Packages)b 6-Pin SO70c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/_C above 70_C
New Product
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd rON Matchd VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V V+ = 1.8 V, VCOM = 0.2 V/0.9 V INO, INC = 10 mA Full Room Fulld Room V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Room Room Fulld Room Fulld Room Fulld -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 0.25 0.5 5.0 0.5 5.0 0.5 5.0 nA 0 2.7 2.7 V+ 5.3 5.3 3 W V
Limits
-40 to 85_C
Symbol
V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 Ve
Tempa
Minb
Typc
Maxb
Unit
Switch Off Leakage
Currentf
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitanced Input Currentf
VINH
Full Full Full VIN = 0 or V+ Full
1.6 0.4 3 -1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Timed Turn-Off Timed Break-Before-Make Timed Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W CL = 5 pF f = 1 MHz W, pF, VNO or VNC = 1 5 V RL = 300 W CL = 35 pF 1.5 V, W, F Figures 1 and 2 Room Fulld Room Fulld Room Room Room Room Room VIN = 0 or V+, f = 1 MHz Room 58 2 7 -63 -64 22 pF dB pC 43 23 63 65 45 46 ns
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Document Number: 72176 S-03723--Rev. A, 07-Apr-03
DG2012
New Product
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatness rON MatchFlat VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 3.3 V VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO INC = 10 mA Full Room Full Room V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room Room Full Room Full Room Full -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 0.25 0.5 5.0 0.5 5.0 0.5 5.0 nA 0 1.4 1.6 V+ 2.1 2.3 0.85 W V
Vishay Siliconix
Limits
-40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.6 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
Switch Off Leakage
Current f
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitanced Input Currentf
VINH
Full Full Full VIN = 0 or V+ Full
2 0.6 3 -1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W CL = 5 pF f = 1 MHz W, pF, VNO or VNC = 2 0 V RL = 300 W CL = 35 pF 2.0 V, W, F Figure 1 and 2 Room Full Room Full Room Room Room Room Room VIN = 0 or V+, f = 1 MHz Room 57 1 10 -63 -64 21 pF dB pC 27 17 47 48 37 38 ns
Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced
Power Supply
Power Supply Range Power Supply Current V+ I+ VIN = 0 or V+ 1.8 0.01 5.5 1.0 V mA
Document Number: 72176 S-03723--Rev. A, 07-Apr-03
www.vishay.com
3
DG2012
Vishay Siliconix
SPECIFICATIONS (V+ = 5.0 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd rON Matchd VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) Switch Off Leakage Current ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 5.0 V VNO, VNC = 0.5 V/4.5 V, VCOM = 4.5 V/0.5 V V+ = 4.5 V, VCOM = 0.5 V/2.5 V INO, INC = 10 mA Full Room Full Room V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room Room Full Room Full Room Full -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 0.25 0.5 5.0 0.5 5.0 0.5 5.0 nA 0 1.0 1.2 V+ 1.8 1.9 0.55 W V
New Product
Limits
-40 to 85_C
Symbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa
Minb
Typc
Maxb
Unit
V+ = 5.0 V, VNO, VNC = VCOM = 0.5 V/4.5 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
2.4 0.8 3 -1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Timed Turn-Off Timed Break-Before-Make Timed Charge Injectiond tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W CL = 5 pF f = 1 MHz W, pF, VNO or VNC = 3 V, RL = 300 W CL = 35 pF V W, F Figure 1 and 2 Room Full Room Full Room Room Room Room Room VIN = 0 or V+, f = 1 MHz Room 56 1 20 -63 -64 20 pF dB pC 17 13 38 39 32 33 ns
Off-Isolationd Crosstalkd Source-Off Capacitanced Channel-On Capacitanced Notes: a. b. c. d. e. f.
Room = 25C, Full = as determined by the operating suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested.
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Document Number: 72176 S-03723--Rev. A, 07-Apr-03
DG2012
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM Supply Voltage
6 IS = 10 mA r ON - On-Resistance ( W ) r ON - On-Resistance ( W ) 5 5 6 IS = 10 mA
Vishay Siliconix
rON vs. Analog Voltage and Temperature
4 V+ = 1.8 V 3 V+ = 2 V 2 V+ = 3 V V+ = 5 V
4 V+ = 2 V 3 85_C 25_C -40_C V+ = 3 V 85_C 25_C -40_C V+ = 5 V 85_C 25_C
2
1
1 -40_C
0 0 1 2 3 4 5
0 0 1 2 3 4 5
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
Supply Current vs. Temperature
10000 V+ = 5 V VIN = 0 V I+ - Supply Current (nA) 1000 I+ - Supply Current (A) 10 m 1m 100 m 10 m 1m 100 n 10 n 1n 1 -60 100 p -40 -20 0 20 40 60 80 100
Supply Current vs. Input Switching Frequency
V+ = 3 V
100
10
10
100
1K
10 K
100 K
1M
10 M
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
1000 V+ = 5 V 250 200 150 100 Leakage Current (pA) Leakage Current (pA) 100 50 0 -50 -100 -150 ICOM(off) 0.1 -60 -200 -250 -40 -20 0 20 40 60 80 100 0
Leakage vs. Analog Voltage
V+ = 5 V T = 25_C ICOM(off)
10
INO(off)/INC(off)
ICOM(on)
ICOM(on)
INO(off)/INC(off)
1
1
2
3
4
5
Temperature (_C)
VCOM, VNO, VNC - Analog Voltage
Document Number: 72176 S-03723--Rev. A, 07-Apr-03
www.vishay.com
5
DG2012
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
50 t OFF - Switching Time (ns) 45 40 35 30 25 20 15 10 5 0 -60 tON V+ = 3 V tOFF V+ = 2 V tOFF V+ = 3 V tON V+ = 5 V tOFF V+ = 5 V tON V+ = 2 V Loss, OIRR, XTALK (dB)
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 100 K XTALK V+ = 5 V RL = 50 W OIRR LOSS
t ON,
-40
-20
0
20
40
60
80
100
1M
10 M Frequency (Hz)
100 M
1G
Temperature (_C)
Switching Threshold vs. Supply Voltage
3.0 30
Charge Injection vs. Analog Voltage
V T - Switching Threshold (V)
2.5 Q - Charge Injection (pC)
20 V+ = 5 V 10 V+ = 3 V
2.0
1.5
0 V+ = 2 V -10
1.0
0.5
-20
0.0 0 1 2 3 4 5 6 7 V+ - Supply Voltage (V)
-30 0 1 2 3 4 5 6 VCOM - Analog Voltage (v)
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Document Number: 72176 S-03723--Rev. A, 07-Apr-03
DG2012
New Product
TEST CIRCUITS
V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND RL 300 W CL 35 pF COM Switch Output VOUT 0.9 x VOUT Switch Output 0V tON tOFF VINH 50% VINL
Vishay Siliconix
tr t 5 ns tf t 5 ns
CL (includes fixture and stray capacitance) V OUT + V COM RL R L ) R ON
Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense.
FIGURE 1. Switching Time
V+ Logic Input COM VO RL 300 W CL 35 pF VINH VINL tr <5 ns tf <5 ns
V+ VNO VNC NO NC IN GND
VNC = VNO VO Switch Output 0V
90%
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen + Vgen
V+ COM IN GND NC or NO VOUT VOUT CL = 1 nF IN On
DVOUT
Off Q = DVOUT x CL
On
VIN = 0 - V+ IN depends on switch configuration: input polarity determined by sense of switch.
FIGURE 3. Charge Injection
Document Number: 72176 S-03723--Rev. A, 07-Apr-03
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7
DG2012
Vishay Siliconix
TEST CIRCUITS
New Product
V+ 10 nF
V+ NC or NO IN COM RL V COM Off Isolation + 20 log V NO NC 0V, 2.4 V
GND
Analyzer
FIGURE 4. Off-Isolation
V+ 10 nF
V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
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Document Number: 72176 S-03723--Rev. A, 07-Apr-03

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